triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 1 2 - 6 ghz gain block amplifier TGA8226-SCC key features and performance 2 to 6 ghz frequency range 13.5 db gain 17 dbm output power at 1 db gain compression 5.5 db noise figure operates from single 15v supply 1.479 x 1.860 x 0.1524 mm (0.058 x 0.073 x 0.006 in.) description the triquint TGA8226-SCC is a self biased distributed amplifier and operates from a single 15 v supply. four 457 um fets produce a typical gain greater than 13.5 db, with input and output swrs less than 2:1. direct cascading without additional components is possible by using the on-chip blocking capacitors. ground is provided to the circuitry through vias to the backside metallization. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire- bonding processes. the TGA8226-SCC is available in chip form and is readily assembled using automated equipment. february 23, 2001
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 2 TGA8226-SCC typical small-signal power gain typical noise figure typical output power p 1db
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 3 TGA8226-SCC typical input return loss typical output return loss absolute maximum ratings positive supply voltage, v+????????????????????????????? 18 v pow er dissipation, p d at (or below ) 25 o c base-plate temperature *???????????? 4.4 w input continuous-w ave pow er, p in ????????????????????????? ? 23 db operating channel temperature, t ch **???????????????????????? ? 150 o c mounting temperature (30 sec.), t m ????????????????????????? ? 320 o c storage temperature range, t stg ?????????????????????????? ? -65 to 150 o c ratings over operating channel temperature range, t ch (unless otherwise noted). stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "rf characteristics" is not implied. exposure to absolute maximum rated conditions for extended periods may affect device reliability. * for operation above 25 o c base-plate temperature, derate linearly at the rate of 9.2 mw / o c. ** operating channel temperature (t ch ) directly affects the device mttf. for maximum life, it is recommended that channel temperature be maintained at the low est possible level.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 4 TGA8226-SCC dc probe tests (t a = 25 c 5 c) symbol parameter minimum maximum value idss saturated drain current (@ 12v) 40 110 ma v p pinch-off voltage -5 -2 v bvgs breakdown voltage gate-source -30 -8 v bvgd breakdown voltage gate-drain -30 -8 v on-wafer rf probe characteristics (t a = 25 c 5 c) v d = 15 v symbol parameter test condition limit min nom max units gain small signal gain f = 2 ? 3 ghz f = 4 ? 6 ghz 10 12 13 14 --- --- db irl input return loss f = 2 ? 6 ghz --- -14 -10 db orl output return loss f = 2 ? 6 ghz --- -14 -10 db pwr output power @ p1db f = 2 ? 3 ghz f = 3 ? 6 ghz 14 15 17 17 --- --- dbm nf noise figure f = 2 ? 6 ghz --- 5.5 6.5 db
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 5 TGA8226-SCC v+ = 15 v, t a = 25 o c, dc-coupled bias and external dc blocks typical s-parameters reference planes for s-parameter data include bond wires as specified in the ?recommended assembly diagram?. the s-parameters are also available on floppy disk and the world wide web. frequency s 11 s 21 s 12 s 22 gain (ghz) mag ang() mag ang() mag ang() mag ang() (db) 0.5 0.15 7 2.70 21 0.000 30 0.21 153 8.6 1.0 0.15 -20 3.47 -6 0.001 104 0.20 125 10.8 1.5 0.14 -44 4.01 -27 0.001 124 0.21 100 12.1 2.0 0.14 -73 4.49 -49 0.002 124 0.20 80 13.1 2.5 0.13 -104 4.89 -72 0.004 119 0.20 62 13.8 3.0 0.13 -133 5.14 -95 0.006 110 0.20 48 14.2 3.5 0.14 -155 5.15 -118 0.009 88 0.20 34 14.2 4.0 0.16 -174 5.10 -139 0.008 64 0.19 22 14.2 4.5 0.18 169 5.07 -160 0.007 57 0.17 12 14.1 5.0 0.19 157 5.06 180 0.008 50 0.16 0 14.1 5.5 0.19 148 5.08 160 0.008 37 0.14 -12 14.1 6.0 0.20 140 5.13 140 0.008 21 0.12 -21 14.2 6.5 0.20 130 5.27 119 0.008 -5 0.10 -24 14.4 7.0 0.19 111 5.49 98 0.008 -33 0.08 -14 14.8 7.5 0.13 73 5.97 75 0.011 -68 0.09 -10 15.5 8.0 0.16 -38 6.73 46 0.017 -106 0.11 -24 16.6 8.5 0.50 -117 7.01 3 0.023 -154 0.13 -73 16.9 9.0 0.69 -168 5.07 -38 0.022 165 0.10 -128 14.1 9.5 0.69 162 3.37 -65 0.018 141 0.07 -160 10.6 10.0 0.65 144 2.38 -86 0.015 128 0.05 176 7.5 p arameter test conditions typ unit i + pos itive s upply current v + = 15 v t a = 25c 68 ma v+ = 15 v, t a = 25 o c, dc-coupled bias and external dc blocks t a = 25 o c rf characteristics dc characteristics p arameter test conditions typ unit g p small?s ignal pow er gain f = 2 to 6 ghz 13.5 db swr(in) input s tanding w ave ratio f = 2 to 6 ghz 1.4:1 - swr(out) output s tanding w ave ratio f = 2 to 6 ghz 1.4:1 - p 1db output pow er at 1?db gain compres s ion f = 2 to 6 ghz 17 dbm nf nois e figure f = 2 to 6 ghz 5.5 db f = 2 ghz 26 ip 3 output third?order intercept point f = 4 ghz 28 dbm f = 6 ghz 27
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 6 TGA8226-SCC equivalent schematic typical bias network (dc-blocked bias circuit) (dc-coupled bias circuit)
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 7 TGA8226-SCC recommended assembly diagram dc-blocked bias circuit rf connections: bond using 1-mil diameter, 15-mil-length gold bond wires at both rf input and rf output for optimum rf performance. close placement of external components is essential to stability. refer to triquint?s recommended assembly instructions for gaas products.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 8 TGA8226-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram dc-coupled circuit rf connections: bond using 1-mil diameter, 15-mil-length gold bond wires at both rf input and rf output for optimum rf performance. close placement of external components is essential to stability. refer to triquint?s recommended assembly instructions for gaas products.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 9 TGA8226-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8226-SCC mechanical drawing
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